Samsung 850 EVO V-NAND 1TB Solid State Drive mSATA (MZ-M5E1T0)


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Price: $489.00
(as of Apr 13,2022 02:31:37 UTC – Details)

What is 3D V-NAND and how does it differ from existing technology? Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar V-NAND architecture. 3D V-NAND stacks 32 cell layers vertically over one another rather than decreasing cell dimensions and trying to fit itself onto a fixed horizontal space. As a result, the technology provides higher density and better performance utilising a smaller footprint. Optimise computing with TurboWrite technology for unrivalled read / write speeds. Achieve ultimate read / write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. Compared to the 840 EVO, the 850 EVO shows an increased overall user experience of approximately 13%, partly thanks to the now 2x faster random write speeds The 850 EVO delivers top-notch performance in its class, with sequential read and write speeds of 540 MB/s and 520 MB/s, respectively. Enjoy optimised random performance in all Queue Depths (QD) for client PC usage scenarios. Increase memory storage with RAPID mode. The Samsung 850 EVO mSATA is a speed machine. With the latest Samsung Magician software, you can activate the RAPID mode to tap unused PC memory (DRAM) and use it as cache storage up to 25 percent of the total DRAM capacity. With the dramatic increase in storage, data processing speeds and random QD can be up to 2x faster under the RAPID mode. Endurance and reliability bolstered by 3D V-NAND technology. Through improving performance by up to 30%, the 850 EVO allows sustained performance making it one of the most dependable storage solutions. Energy efficiency backed by 3D V-NAND. The 850 Evo introduced the 2 mW device sleep mode
Form Factor: MSATA.
Sequential Read: Up to 540 MB/sec.
Sequential Write: Up to 520 MB/sec.


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